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| aftra t draft drraft draft draft drafftdraftdraftdraftdraftdft draft draft draft draft draft dra 1. general description the TEF6606 is an am/fm radio including phase-locked loop (pll) tuning system. the system is designed in such a way, that it can be used as a world-wide tuner covering common fm and am bands for radio reception. all functions are controlled by the i 2 c-bus. besides the basic feature set it provides a good weak signal processing function and a dynamic bandwidth control at fm reception. 2. features n fm tuner for japan, europe, us and oirt reception n am tuner for long wave (lw), medium wave (mw) and short wave (sw) reception n integrated am radio frequency (rf) selectivity n integrated pll tuning system; controlled via i 2 c-bus including automatic low/high side local oscillator (lo) injection n fully integrated lo n no alignment needed n very easy application on the main board n no critical rf components n fully integrated intermediate frequency (if) ?lters and fm stereo decoder n fully integrated fm noise blanker n fully integrated am audio noise blanker n field strength (level), multipath [wideband am (wam)], noise [ultrasonic noise (usn)] and deviation dependent stereo blend n field strength (level), multipath (wam), noise (usn) and deviation dependent high-cut control (hcc) n field strength (level), multipath (wam) and noise (usn) dependent soft mute n adjacent channel and deviation dependent if bandwidth control [precision adjacent channel suppression (pacs)] n single power supply n quali?ed in accordance with aec-q100 TEF6606 advanced tuner on main-board ic rev. 01.03 12 june 2007 objective data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
a TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 12 june 2007 2 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 3. quick reference data 4. ordering information table 1. quick reference data symbol parameter conditions min typ max unit v cc supply voltage on pins v cc1 and v cc2 8 8.5 9 v i cc supply current into pins v cc1 , v cc2 and vregsup fm 90 120 140 ma am 100 134 150 ma fm path f rf rf frequency fm tuning range 65 - 108 mhz v i(sens) input sensitivity voltage (s+n)/n = 26 db; including weak signal handling -5-db m v (s+n)/n signal plus noise-to-noise ratio v i(rf) = 1 mv; d f = 22.5 khz 55 60 - db thd total harmonic distortion mono; d f = 75 khz; v i(rf) =1mv - 0.4 0.8 % a image image rejection f rf(image) = f rf(wanted) 2 f if 50 60 - db a cs channel separation v i(rf) = 1 mv; data byte fh bits chsep[2:0] = 100 26 40 - db am path f rf rf frequency tuning range am (lw) tuning range 144 - 288 khz am (mw) tuning range 522 - 1710 khz am (sw) tuning range 2.94 - 18.135 mhz v i(sens) input sensitivity voltage s/n = 26 db; data byte 3h bits demp[1:0] = 10; mw -34-db m v (s+n)/n signal plus noise-to-noise ratio v i(rf) =10mv 50 56 - db thd total harmonic distortion v i(rf) = 1 mv; m = 80 % - 0.7 1 % a image image rejection f rf(image) = f rf(wanted) 2 f if 45 55 - db table 2. ordering information type number package name description version TEF6606t so32 plastic small outline package; 32 leads; body width 7.5 mm sot287-1 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 3 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 5. block diagram fig 1. block diagram of TEF6606t 001aag186 17 gndd am tuner fm tuner output TEF6606t pll tuning system power supply i 2 c-bus stereo decoder high cut soft mute noise blanker signal improvement control bandwidth control 18 scl 19 sda 20 vref 21 vregsup 22 v cc1 23 gnd 29 amselin2 28 amselin1 27 test 30 amifagc1 31 amselout1 32 amrfdec 1 amrfin 2 gndrf 5 v cc2 6 amrfagc 7 amifagc2 11 mpxin 12 mpxout 13 rssi 14 xtal2 15 xtal1 16 amselout2 24 vcodec 25 pll 26 pllref gndaud 10 rout 9 lout 8 fmin1 4 fmin2 3 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 4 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 6. pinning information 6.1 pinning 6.2 pin description fig 2. pin contguration TEF6606t amrfdec amselout2 amrfin amselout1 fmin2 amifagc1 fmin1 amselin2 gndrf amselin1 v cc2 test amrfagc pllref lout pll rout vcodec gndaud gnd amifagc2 v cc1 mpxin vregsup mpxout vref rssi sda xtal2 scl xtal1 gndd 008aaa076 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 18 17 20 19 22 21 24 23 26 25 32 31 30 29 28 27 table 3. pin description symbol pin description amrfdec 1 am rf decoupling amrfin 2 am rf single-ended input fmin2 3 fm rf differential input 2 fmin1 4 fm rf differential input 1 gndrf 5 rf ground v cc2 6 supply voltage 2 amrfagc 7 am rf automatic gain control (agc) lout 8 audio left output rout 9 audio right output gndaud 10 audio ground amifagc2 11 am if agc 2 mpxin 12 fm multiplex (mpx) and am audio input to stereo decoder mpxout 13 fm mpx and am audio output from tuner part rssi 14 received signal strength indication (rssi) xtal2 15 4 mhz crystal oscillator pin 2 xtal1 16 4 mhz crystal oscillator pin 1 gndd 17 digital ground scl 18 i 2 c-bus clock input www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 5 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 7. functional description 7.1 fm tuner the rf input signal is mixed to a low if with inherent image suppression. the if signal is tltered and demodulated. the complete signal path is fully integrated. 7.2 am tuner the rf signal is tltered and mixed to a low if with inherent image suppression. the if signals are tltered and demodulated. the signal path is highly integrated. 7.3 pll tuning system the pll tuning system includes a fully integrated vco. to avoid problems with unwanted signals on image side, the receiver controls automatically high-side or low-side injection. 7.4 signal dependent fm if bandwidth control the bandwidth of the fm if tlter will be controlled by an adjacent channel detector and a deviation detector to optimize the reception. 7.5 fm stereo decoder the mpx signal from the fm tuner is translated by the stereo decoder into a left and right audio channel. good channel separation is achieved without alignment. 7.6 weak signal processing and noise blanker the reception quality of the station received is measured by a combination of detectors: teld strength (level), multipath (wam) and noise (usn). the audio processing functions soft mute, hcc and stereo blend are controlled accordingly to maintain the best possible sda 19 i 2 c-bus data input and output vref 20 reference voltage decoupling vregsup 21 supply voltage internal voltage regulators v cc1 22 supply voltage 1 gnd 23 ground vcodec 24 decoupling for voltage-controlled oscillator (vco) supply voltage pll 25 pll tuning voltage pllref 26 pll reference voltage test 27 test pin; leave open in normal operation amselin1 28 am selectivity input 1 amselin2 29 am selectivity input 2 amifagc1 30 am if agc 1 amselout1 31 am selectivity output 1 amselout2 32 am selectivity output 2 table 3. pin description continued symbol pin description www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 6 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic audio quality in case of poor signal conditions. audio disturbances like e.g. ignition noise are suppressed by the noise blanker circuit, using usn detection on mpx and spike detection on the level signal. 7.7 i 2 c-bus transceiver the ic can be controlled by means of the i 2 c-bus including fast mode. 8. i 2 c-bus protocol 8.1 read mode fig 3. write mode ack-s ack-s data slave address w data transferred (n bytes + acknowledge) 001aad051 p s ack-s msa fig 4. read mode data ack-s ack-m data na slave address r 001aad049 p s data transferred (n - 1 bytes + acknowledge) table 4. description of i 2 c-bus format code description s start condition slave address w 1100 0000b slave address r 1100 0001b ack-s acknowledge generated by the slave ack-m acknowledge generated by the master na not acknowledge msa mode and subaddress byte data data byte p stop condition table 5. read register overview data byte name reference 0h status section 8.1.1 1h level section 8.1.2 2h usn_wam section 8.1.3 3h ifcounter section 8.1.4 4h id section 8.1.5 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 7 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.1.1 read mode: data byte status [1] when pll tuning is ready the quality detectors are reset for fastest result. in fm mode the trst reliable quality result of level, usn and wam is available from 1 ms after reset. in am mode the trst level result is available from 1 ms, gradually changing from peak level towards average level realizing the maximum attenuation of am modulation in?uence from 32 ms. the quality result of an af update tuning is stored and can be read at any time later. 8.1.2 read mode: data byte level table 6. status - data byte 0h bit allocation 7 6 5 4 3 2 1 0 qrs1 qrs0 por stin - - tas1 tas0 table 7. status - data byte 0h bit description bit symbol description 7 and 6 qrs[1:0] quality read status [1] 00 = no quality data available (tuning is in progress or quality data is settling) 01 = quality data (level, usn and wam) available; for if counter check the ifcs status 10 = af update quality data available of level, usn, wam and if counter 11 = not used 5 por power-on reset indicator 0 = standard operation 1 = power on or power dip detected; i 2 c-bus settings are lost 4 stin stereo indicator 0 = no pilot detected 1 = stereo pilot detected 3 and 2 - not used 1 and 0 tas[1:0] tuning action state 00 = tuning not active; not muted 01 = muting in progress 10 = tuning in progress 11 = tuning ready and muted table 8. level - data byte 1h bit allocation 7 6 5 4 3 2 1 0 lev7 lev6 lev5 lev4 lev3 lev2 lev1 lev0 table 9. level - data byte 1h bit description bit symbol description 7 to 0 lev[7:0] level detector (rssi) output signal via fast level detector timing 0 to 255 = 0.25 v to 4.25 v www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 8 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.1.3 read mode: data byte usn_wam 8.1.4 read mode: data byte ifcounter [1] when pll tuning is ready the if counter and other quality detectors are reset for fastest result. the trst if counter result is available from 2 ms after reset. further results are available from 8 ms and 32 ms after reset, reducing the in?uence of fm modulation on the counter result. later counter results are available at a count time of 32 ms. table 10. usn_wam - data byte 2h bit allocation 7 6 5 4 3 2 1 0 usn3 usn2 usn1 usn0 wam3 wam2 wam1 wam0 table 11. usn_wam - data byte 2h bit description bit symbol description 7 to 4 usn[3:0] fm ultrasonic noise 0 to 15 = 0 % to 100 % equivalent fm modulation at 100 khz ultrasonic noise content (usn) 3 to 0 wam[3:0] fm wideband am (multipath) 0 to 15 = 0 % to 100 % am modulation at 20 khz wideband am content (wam) table 12. ifcounter - data byte 3h bit allocation 7 6 5 4 3 2 1 0 ifcs1 ifcs0 ifcn ifc4 ifc3 ifc2 ifc1 ifc0 table 13. ifcounter - data byte 3h bit description bit symbol description 7 and 6 ifcs[1:0] if counter status [1] 00 = no trst counter result available 01 = trst counter result available from 2 ms count time 10 = counter result available from 8 ms count time 11 = counter result available from 32 ms count time 5 ifcn if count result negative 0 = positive rf frequency difference 1 = negative rf frequency difference 4 to 0 ifc[4:0] if counter result; see t ab le 14 table 14. if counter result ifc4 ifc3 ifc2 ifc1 ifc0 frequency difference fm am 000000khzto5khz 0khzto0.5khz 000015khzto10khz 0.5khzto1khz 0001010khzto15khz 1khzto1.5khz 0001115khzto20khz 1.5khzto2khz 0010020khzto25khz 2khzto2.5khz www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 9 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.1.5 read mode: data byte id 8.2 write mode :::::: : 11110150khzto155khz 15khzto 15.5 khz 11111>155khz > 15.5 khz table 14. if counter result continued ifc4 ifc3 ifc2 ifc1 ifc0 frequency difference fm am table 15. id - data byte 4h bit allocation 7 6 5 4 3 2 1 0 tinj ifbw2 ifbw1 ifbw0 - id2 id1 id0 table 16. id - data byte 4h bit description bit symbol description 7 tinj lo injection 0 = low injection lo 1 = high injection lo 6 to 4 ifbw[2:0] if bandwidth information 000 to 111 = narrow to wide fm if tlter bandwidth 3 - not used 2 to 0 id[2:0] device type identitcation 010 = TEF6606 table 17. write mode subaddress overview subaddress name default reference 0h tuner0 0010 0110b section 8.2.2 1h tuner1 1111 1010b section 8.2.3 2h tuner2 0000 0000b section 8.2.4 3h radio 1000 0000b section 8.2.5 4h softmute0 0000 0000b section 8.2.6 5h softmute1 0000 0000b section 8.2.7 6h softmute2_fm 0000 0000b section 8.2.8 6h softmute2_am 0000 0000b section 8.2.9 7h highcut0 0000 0000b section 8.2.10 8h highcut1 0000 0000b section 8.2.11 9h highcut2 0000 0000b section 8.2.12 ah stereo0 0000 0000b section 8.2.13 bh stereo1 0000 0000b section 8.2.14 ch stereo2 0000 0000b section 8.2.15 dh control 0001 0100b section 8.2.16 eh level_offset 0100 0000b section 8.2.17 fh am_lna 0011 1100b section 8.2.18 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 10 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.1 mode and subaddress byte for write table 18. msa - mode and subaddress byte bit allocation 7 6 5 4 3 2 1 0 mode2 mode1 mode0 0 sa3 sa2 sa1 sa0 table 19. msa - mode and subaddress byte bit description bit symbol description 7 to 5 mode[2:0] mode; see t ab le 20 4 - not used, must be set to logic 0 3 to 0 sa[3:0] subaddress table 20. tuning action modes mode2 mode1 mode0 symbol description 0 0 0 standard write without tuning action 0 0 1 preset tune to new station with short mute time; see figure 5 0 1 0 search tune to new station and stay muted; see figure 6 and figure 7 0 1 1 af update tune to af station; store af quality and tune back to main station; see figure 8 and figure 9 1 0 0 af jump tune to af station in minimum mute time; see figure 10 and figure 11 1 0 1 af check tune to af station and stay muted; swap; see figure 12 , figure 13 and figure 14 1 1 0 mirror test check current image situation and select injection mode for best result; see figure 15 1 1 1 end end; release mute from search mode or af check mode www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 11 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic fig 5. preset mode 001aaf555 freq x freq 0 freq 0 00 01 10 11 mute 00 freq 0 freq 1 freq 1 freq 0 preload swap freq 1 freq 1 preset 1 ms tuning 32 ms 1 ms p i 2 c-bus buffer register control register tuning tas qrs audio quality detectors weak signal timing level usn wam if count freq 0 freq 1 time continuous user defined user defined continuous reset freq 0 hold continuous result freq 0 continuous result freq 1 fast settling < 30 ms 01 00 01 freq 0 hold 0 2 ms 8 ms 32 ms 32 ms 2 ms freq 1 8 ms freq 1 32 ms freq 1 result freq 0 reset count count count ifcs 00 01 10 11 11 or 10 or 01 1 ms www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 12 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic fig 6. search mode 001aaf556 freq x freq 0 freq 0 00 01 10 11 mute freq 0 freq 1 freq 1 freq 0 preload swap freq 1 freq 1 search 1 ms tuning p i 2 c-bus buffer register control register tuning tas audio quality detectors weak signal timing level usn wam if count freq 0 freq 1 time continuous user defined continuous reset freq 0 hold continuous result freq 0 continuous result freq 1 fast settling < 30 ms freq 0 hold 0 2 ms 8 ms 32 ms 32 ms 2 ms freq 1 8 ms freq 1 32 ms freq 1 result freq 0 reset count count count qrs 01 00 01 ifcs 00 01 10 11 11 or 10 or 01 1 ms www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 13 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic fig 7. search mode after search, end 001aaf557 freq x freq 0 freq 0 11 10 11 mute 00 freq 0 freq 1 f1 freq 0 preload swap freq 1 freq 1 search tuning 1 ms p i 2 c-bus buffer register control register tuning tas audio quality detectors weak signal timing level usn wam if count freq 0 freq 1 time continuous user defined continuous reset freq 0 hold continuous freq 0 continuous result freq 1 fast settling < 30 ms freq 0 hold 0 2 ms 8 ms 32 ms 32 ms 2 ms freq 1 8 ms freq 1 32 ms freq 1 result freq 0 reset count count count count end p qrs 01 00 01 ifcs 00 01 10 11 11 or 10 or 01 1 ms www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 14 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic fig 8. af update mode 001aaf558 freq x freq 0 freq 0 00 01 10 11 mute 00 10 freq 0 freq 1 freq 1 freq 0 (preload) swap freq 1 freq 1 freq 0 freq 1 afu 1 ms tuning tuning 2 ms 1 ms p i 2 c-bus buffer register control register tuning tas audio quality detectors weak signal timing level usn wam if count freq 0 freq 1 swap freq 1 freq 0 time freq 0 continuous user defined user defined continuous continuous reset freq 0 hold continuous result freq 0 continuous result freq 0 freq 1 hold until read cont. freq 1 hold freq 0 hold 0 2 ms 2 ms 8 ms 2 ms result freq 1 hold until read result freq 0 result freq 0 reset count count reset count read p reset qrs 01 00 01 10 01 ifcs 00 01 10 (1) (1) depends on time between end of tuning and read out 11 or 10 or 01 1 ms www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 15 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic fig 9. af update mode after check 001aaf559 freq x freq 0 00 01 10 11 mute 00 10 freq 0 freq 1 freq 1 freq 0 swap freq 1 freq 1 freq 0 freq 1 check 1 ms tuning tuning 1 ms p i 2 c-bus buffer register control register tuning tas audio quality detectors weak signal timing level usn wam if count freq 0 freq 1 swap freq 0 afu p f0 freq 1 freq 0 time freq 0 continuous user defined user defined continuous continuous reset freq 0 hold continuous result freq 0 freq 1 hold until i 2 c-bus read freq 1 hold until i 2 c-bus read continuous result freq 1 hold 10 freq 0 hold 2 ms 2 ms freq 1 8 ms freq 1 hold 8 ms freq 1 result freq 0 reset reset count 0 2 ms 8 ms count count reset freq 1 hold qrs 01 00 01 ifcs 00 01 10 11 or 10 or 01 1 ms www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 16 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic fig 10. jump mode 001aaf560 freq x freq 0 freq 0 00 01 10 mute 00 freq 0 freq 1 freq 1 freq 0 (preload) swap freq 1 freq 1 jump 1 ms tuning 1 ms p i 2 c-bus buffer register control register tuning tas audio quality detectors weak signal timing level usn wam if count freq 0 freq 1 time continuous user defined user defined continuous reset freq 0 hold continuous result freq 0 continuous result freq 1 hold freq 0 hold 0 2 ms 8 ms 32 ms 32 ms 2 ms freq 1 8 ms freq 1 32 ms freq 1 result freq 0 reset count count count qrs 01 00 01 ifcs 00 01 10 11 11 or 10 or 01 1 ms www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 17 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic fig 11. jump mode after check 001aaf561 freq x freq 0 00 01 10 11 mute 10 00 freq 0 freq 1 freq 1 freq 0 swap freq 1 freq 1 freq 0 freq 0 freq 1 check 1 ms tuning 1 ms p i 2 c-bus buffer register control register tuning tas qrs audio quality detectors weak signal timing level usn wam if count freq 0 freq 1 swap freq 1 freq 0 time continuous user defined user defined continuous continuous reset reset freq 0 hold continuous result freq 0 continuous result freq 1 continuous result freq 0 hold 01 00 01 00 01 tuning freq 0 hold 0 2 ms 8 ms 2 ms freq 1 8 ms freq 1 8 ms freq 1 hold 0 result freq 0 reset count count freq 1 hold count ifcs 00 01 10 10 00 01 11 or 10 or 01 freq 0 jump p f0 2 ms 1 ms 1 ms www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 18 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic fig 12. check mode 001aaf562 freq x freq 0 freq 0 00 01 10 11 mute freq 0 freq 1 freq 1 freq 0 (preload) swap freq 1 freq 1 check 1 ms tuning p i 2 c-bus buffer register control register tuning tas audio quality detectors weak signal timing level usn wam if count ifcs freq 0 freq 1 time continuous user defined hold continuous reset freq 0 hold continuous result freq 0 continuous result freq 1 freq 0 hold 0 2 ms 8 ms 32 ms 32 ms 2 ms freq 1 8 ms freq 1 32 ms freq 1 result freq 0 reset count count count 00 01 10 11 11 or 10 or 01 qrs 01 00 01 1 ms www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 19 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic fig 13. check mode after check, end 001aaf563 freq x freq 0 11 10 11 mute 00 freq 0 freq 1 f1 freq 0 swap freq 1 freq 1 check tuning 1 ms p i 2 c-bus buffer register control register tuning tas audio quality detectors weak signal timing level usn wam if count freq 0 freq 1 time continuous user defined continuous reset freq 0 hold continuous freq 0 continuous result freq 1 hold freq 0 hold 0 2 ms 8 ms 32 ms 32 ms 2 ms freq 1 8 ms freq 1 32 ms freq 1 result freq 0 reset count count count count ifcs 00 01 10 11 11 or 10 or 01 end p qrs 01 00 01 1 ms www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 20 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic fig 14. check mode after check, preset 001aaf564 freq x freq 0 11 10 11 10 mute 11 00 freq 0 freq 1 freq 0 freq 1 preload swap freq 1 freq 1 freq 2 freq 1 check tuning 32 ms p f1 i 2 c-bus buffer register control register tuning tas audio quality detectors weak signal timing level usn wam if count freq 0 freq 1 swap freq 1 freq 2 time continuous hold user defined continuous continuous reset reset freq 0 hold continuous freq 0 continuous result freq 1 continuous result freq 2 fast settling < 30 ms 01 00 01 00 01 qrs tuning 1 ms freq 0 hold 0 2 ms 8 ms 32 ms 8 ms 2 ms freq 1 8 ms freq 1 freq 1 hold 0 result freq 0 reset count count count reset freq 2 freq 2 32 ms freq 2 freq 1 hold count ifcs 00 01 10 00 11 or 10 or 01 01 10 11 freq 2 preset p f2 2 ms 1 ms 1 ms www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 21 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic fig 15. image test 008aaa077 freq x freq 0 00 01 10 00 mute freq 0 freq 0 image test 1 ms tuning p i 2 c-bus buffer register control register tuning tas audio quality detectors weak signal timing level usn wam freq 0 freq 0 time continuous user defined hold continuous reset freq 0 hold continuous result freq 0 continuous result freq 0 user defined 1 ms qrs 01 00 01 1 ms 2 ms ifcs 00 01 10 11 11 or 10 or 01 if count freq 0 hold 0 8 ms 32 ms 32 ms 2 ms freq 0 8 ms freq 0 32 ms freq 0 result freq 0 reset count count count www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 22 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.2 write mode: data byte tuner0 [1] for a correct tuning result a change in the band or freq setting should always be combined with a tuning action of modes 001 to 101. 8.2.3 write mode: data byte tuner1 [1] for a correct tuning result a change in the band or freq setting should always be combined with a tuning action of mode[2:0] = 001 to 101. table 21. tuner0 - data byte 0h bit allocation with default setting 7 6 5 4 3 2 1 0 0 band1 band0 freq12 freq11 freq10 freq9 freq8 0100110 table 22. tuner0 - data byte 0h bit description bit symbol description 7 - not used, must be set to logic 0 6 and 5 band[1:0] frequency band [1] 00 = am: lw and mw 01 = fm: standard europe, usa and japan 10 = am: sw 11 = fm: oirt (eastern europe) 4 to 0 freq[12:8] upper byte of tuning frequency word [1] ; see t ab le 25 table 23. tuner1 - data byte 1h bit allocation with default setting 7 6 5 4 3 2 1 0 freq7 freq6 freq5 freq4 freq3 freq2 freq1 freq0 11111010 table 24. tuner1 - data byte 1h bit description bit symbol description 7 to 0 freq[7:0] lower byte of tuning frequency word [1] ; see t ab le 25 table 25. tuning frequency band freq[12:0] value reception frequency frequency correlation step am: lw and mw 144 to 1720 144 khz to 1720 khz freq[12:0] = f rf [khz] 1 khz fm: standard europe, usa and japan 1520 to 2160 76 mhz to 108 mhz freq[12:0] = f rf [mhz] 20 50 khz am: sw 588 to 3627 2940 khz to 18135 khz freq[12:0] = f rf [khz] 5 5 khz fm: oirt (eastern europe) 6581 to 7400 65 mhz to 74 mhz freq[12:0] = f rf [mhz] 100 10 khz www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 23 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.4 write mode: data byte tuner2 [1] for a correct tuning result a change in the inj setting should always be combined with mode[2:0] = 110 or a tuning action of mode[2:0] = 001 to 101. table 26. tuner2 - data byte 2h bit allocation with default setting 7 6 5 4 3 2 1 0 rfagc1 rfagc0 inj1 inj0 0 fmbw2 fmbw1 fmbw0 0000 000 table 27. tuner2 - data byte 2h bit description bit symbol description 7 and 6 rfagc[1:0] am rf agc sensitivity control 00 = agc threshold not reduced 01 = agc threshold reduced by 2 db 10 = agc threshold reduced by 4 db 11 = agc threshold reduced by 6 db fm rf agc sensitivity control 00 = agc threshold reduced by 6 db 01 = agc threshold reduced by 4 db 10 = agc threshold reduced by 2 db 11 = agc threshold not reduced 5 and 4 inj[1:0] injection [1] 00 = automatic injection 01 = high injection lo 10 = low injection lo 11 = undetned, do not use 3 - not used, must be set to logic 0 2 to 0 fmbw[2:0] fm bandwidth control 0 = dynamic mode (optimum bandwidth is selected depending on reception conditions) 001 to 111 = narrow to wide fm if tlter bandwidth www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 24 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.5 write mode: data byte radio 8.2.6 write mode: data byte softmute0 table 28. radio - data byte 3h bit allocation with default setting 7 6 5 4 3 2 1 0 nbs1 nbs0 locut mono demp1 demp0 0 outa 100000 0 table 29. radio - data byte 3h bit description bit symbol description 7 and 6 nbs[1:0] am and fm noise blanker sensitivity control 00 = am and fm noise blanker off 01 = low am and fm noise blanker sensitivity 10 = medium am and fm noise blanker sensitivity 11 = high am and fm noise blanker sensitivity 5 locut control of audio high-pass tlter 0 = no limitation ( - 3 db at 7 hz) 1 = high-pass function ( - 3 db at 100 hz) 4 mono mono/stereo switch 0 = fm stereo enabled 1 = fm stereo disabled (forced mono) 3 and 2 demp[1:0] de-emphasis setting 00 = 50 m s de-emphasis 01 = 75 m s de-emphasis 10 = 103 m s low-pass 11 = not used 1 - not used, must be set to logic 0 0 outa audio output gain 0 = low audio gain at lout and rout 1 = high audio gain at lout and rout table 30. softmute0 - data byte 4h bit allocation with default setting 7 6 5 4 3 2 1 0 0 0 0 m at 2 m at 1 m at 0 m rt 1 m rt 0 00000 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 25 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.7 write mode: data byte softmute1 table 31. softmute0 - data byte 4h bit description bit symbol description 7 to 5 - not used, must be set to logic 0 4 to 2 mat[2:0] soft mute slow attack time; see t ab le 32 1 and 0 mrt[1:0] soft mute slow recovery time 00 = 2 times attack time 01 = 4 times attack time 10 = 8 times attack time 11 = 16 times attack time table 32. soft mute attack time mat2 mat1 mat0 soft mute attack time 00060ms 0 0 1 125 ms 0 1 0 250 ms 0 1 1 0.5 s 1001s 1012s 1104s 1118s table 33. softmute1 - data byte 5h bit allocation with default setting 7 6 5 4 3 2 1 0 mfol msol 0 mst2 mst1 mst0 msl1 msl0 00 00000 table 34. softmute1 - data byte 5h bit description bit symbol description 7 mfol soft mute fast on level 0 = no fast control on level 1 = fast control on level active 6 msol soft mute slow on level 0 = no slow control on level 1 = slow control on level active 5 - not used, must be set to logic 0 4 to 2 mst[2:0] soft mute start on level 000 to 111 = high threshold to low threshold of weak signal soft mute control; see figure 16 and figure 17 1 and 0 msl[1:0] soft mute slope on level 00 to 11 = low steepness to high steepness of slope of weak signal soft mute control; see figure 16 and figure 17 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 26 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic (0) mst[2:0] = 000 (1) mst[2:0] = 001 (2) mst[2:0] = 010 (3) mst[2:0] = 011 (4) mst[2:0] = 100 (5) mst[2:0] = 101 (6) mst[2:0] = 110 (7) mst[2:0] = 111 fig 16. fm soft mute controlled by level information lev 20 220 180 100 140 60 001aag139 - 18 - 24 - 6 - 12 0 a mute (db) - 30 (0) (1) (2) (3) (4) (5) (6) (7) msl[1:0] mst[2:0] 00 01 10 11 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 27 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.8 write mode: data byte softmute2_fm (0) mst[2:0] = 000 (1) mst[2:0] = 001 (2) mst[2:0] = 010 (3) mst[2:0] = 011 (4) mst[2:0] = 100 (5) mst[2:0] = 101 (6) mst[2:0] = 110 (7) mst[2:0] = 111 fig 17. am soft mute controlled by level information lev 20 220 180 100 140 60 001aag140 - 18 - 24 - 6 - 12 0 a mute (db) - 30 (0) (1) (2) (3) (4) (5) (6) (7) msl[1:0] mst[2:0] 00 01 10 11 table 35. softmute2_fm - data byte 6h bit allocation with default setting 7 6 5 4 3 2 1 0 mfon mson mns1 mns0 mfom msom mms1 mms0 00000000 table 36. softmute2_fm - data byte 6h bit description bit symbol description 7 mfon soft mute fast on noise (usn) 0 = no fast control on noise (usn) 1 = fast control on noise (usn) active 6 mson soft mute slow on noise (usn) 0 = no slow control on noise (usn) 1 = slow control on noise (usn) active 5 and 4 mns[1:0] sensitivity of soft mute on noise (usn) 00 to 11 = weak to strong soft mute control by fm noise (usn); see figure 18 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 28 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 3 mfom soft mute fast on multipath (wam) 0 = no fast control on multipath (wam) 1 = fast control on multipath (wam) active 2 msom soft mute slow on multipath (wam) 0 = no slow control on multipath (wam) 1 = slow control on multipath (wam) active 1 and 0 mms[1:0] sensitivity of soft mute on multipath (wam) 00 to 11 = weak to strong soft mute control by fm multipath (wam); see figure 19 fig 18. soft mute controlled by usn information fig 19. soft mute controlled by wam information table 36. softmute2_fm - data byte 6h bit description continued bit symbol description usn 015 12 6 39 001aag141 - 18 - 24 - 6 - 12 0 a mute (db) - 30 mns[1:0] 00 01 10 11 wam 015 12 6 39 001aag142 - 18 - 24 - 6 - 12 0 a mute (db) - 30 mms[1:0] 00 01 10 11 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 29 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.9 write mode: data byte softmute2_am 8.2.10 write mode: data byte highcut0 table 37. softmute2_am - data byte 6h bit allocation with default setting 7 6 5 4 3 2 1 0 0 0 0 mlim4 mlim3 mlim2 mlim1 mlim0 00000 table 38. softmute2_am - data byte 6h bit description bit symbol description 7 to 5 - not used, must be set to logic 0 4 to 0 mlim[4:0] soft mute limit 0 0000 to 1 1110 = soft mute control limited at 0 db to 30 db; the soft mute control can be limited to the point at which natural soft mute starts table 39. highcut0 - data byte 7h bit allocation with default setting 7 6 5 4 3 2 1 0 hmod1 hmod0 hlim hat2 hat1 hat0 hrt1 hrt0 0 0 000000 table 40. highcut0 - data byte 7h bit description bit symbol description 7 and 6 hmod[1:0] high-cut on modulation; see figure 20 00 = no modulation control 01 = high-cut (50 m sto103 m s) for < 30 % modulation 10 = high-cut (50 m sto103 m s) for < 50 % modulation 11 = high-cut (50 m sto165 m s) for < 50 % modulation 5 hlim limitation of high-cut control on level, noise (usn) and multipath (wam) 0 = high-cut limit at 165 m s, - 10 db at 10 khz (for 50 m s de-emphasis) 1 = high-cut limit at 103 m s, - 6 db at 10 khz (for 50 m s de-emphasis) 4 to 2 hat[2:0] high-cut slow attack time; see t ab le 41 1 and 0 hrt[1:0] high-cut slow recovery time 00 = 2 times attack time 01 = 4 times attack time 10 = 8 times attack time 11 = 16 times attack time www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 30 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.11 write mode: data byte highcut1 fig 20. high-cut controlled by modulation table 41. high-cut attack time hat2 hat1 hat0 high-cut attack time 00060ms 0 0 1 125 ms 0 1 0 250 ms 0 1 1 0.5 s 1001s 1012s 1104s 1118s modulation (%) 0 100 80 40 60 20 001aag147 75 103 50 de-emphasis ( m s) 165 hmod[1:0] 01 10 11 table 42. highcut1 - data byte 8h bit allocation with default setting 7 6 5 4 3 2 1 0 hfol hsol 0 hst2 hst1 hst0 hsl1 hsl0 00 00000 table 43. highcut1 - data byte 8h bit description bit symbol description 7 hfol high-cut fast on level 0 = no fast control on level 1 = fast control on level active 6 hsol high-cut slow on level 0 = no slow control on level 1 = slow control on level active 5 - not used, must be set to logic 0 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 31 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 4 to 2 hst[2:0] high-cut start on level 000 to 111 = high threshold to low threshold of weak signal high-cut control; see figure 21 and figure 22 1 and 0 hsl[1:0] high-cut slope on level 00 to 11 = low steepness to high steepness of slope of weak signal high-cut control; see figure 21 and figure 22 (0) hst[2:0] = 000 (1) hst[2:0] = 001 (2) hst[2:0] = 010 (3) hst[2:0] = 011 (4) hst[2:0] = 100 (5) hst[2:0] = 101 (6) hst[2:0] = 110 (7) hst[2:0] = 111 fig 21. fm high-cut controlled by level information table 43. highcut1 - data byte 8h bit description continued bit symbol description lev 20 220 180 100 140 60 001aag143 (0) (1) (2) (3) (4) (5) (6) (7) hsl[1:0] 103 75 50 165 de-emphasis ( m s) hst[2:0] 00 01 10 11 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 32 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.12 write mode: data byte highcut2 (0) hst[2:0] = 000 (1) hst[2:0] = 001 (2) hst[2:0] = 010 (3) hst[2:0] = 011 (4) hst[2:0] = 100 (5) hst[2:0] = 101 (6) hst[2:0] = 110 (7) hst[2:0] = 111 fig 22. am high-cut controlled by level information lev 40 240 200 120 160 80 001aag144 (0) (1) (2) (3) (4) 103 75 50 165 de-emphasis ( m s) (5) (6) (7) hst[2:0] hsl[1:0] 00 01 10 11 table 44. highcut2 - data byte 9h bit allocation with default setting 7 6 5 4 3 2 1 0 hfon hson hns1 hns0 hfom hsom hms1 hms0 00000000 table 45. highcut2 - data byte 9h bit description bit symbol description 7 hfon high-cut fast on noise (usn) 0 = no fast control on noise (usn) 1 = fast control on noise (usn) active 6 hson high-cut slow on noise (usn) 0 = no slow control on noise (usn) 1 = slow control on noise (usn) active 5 and 4 hns[1:0] sensitivity of high-cut on noise (usn) 00 to 11 = weak to strong high-cut control by fm noise (usn); see figure 23 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 33 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 3 hfom high-cut fast on multipath (wam) 0 = no fast control on multipath (wam) 1 = fast control on multipath (wam) active 2 hsom high-cut slow on multipath (wam) 0 = no slow control on multipath (wam) 1 = slow control on multipath (wam) active 1 and 0 hms[1:0] sensitivity of high-cut on multipath (wam) 00 to 11 = weak to strong high-cut control by fm multipath (wam); see figure 24 fig 23. high-cut controlled by usn information fig 24. high-cut controlled by wam information table 45. highcut2 - data byte 9h bit description continued bit symbol description usn 015 12 6 39 001aag145 103 75 50 de-emphasis ( m s) 165 hns[1:0] 00 01 10 11 wam 015 12 6 39 001aag146 103 75 50 de-emphasis ( m s) 165 hms[1:0] 00 01 10 11 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 34 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.13 write mode: data byte stereo0 table 46. stereo0 - data byte ah bit allocation with default setting 7 6 5 4 3 2 1 0 smod1 smod0 0 sat2 sat1 sat0 srt1 srt0 0 0 00000 table 47. stereo0 - data byte ah bit description bit symbol description 7 and 6 smod[1:0] stereo blend on modulation; see figure 25 00 = no modulation control 01 = stereo blend (stereo to mono) for < 30 % modulation 10 = stereo blend (stereo to 6 db channel separation) for < 30 % modulation 11 = stereo blend (stereo to mono) for < 15 % modulation 5 - not used, must be set to logic 0 4 to 2 sat[2:0] stereo blend slow attack time; see t ab le 48 1 and 0 srt[1:0] stereo blend slow recovery time 00 = 2 times attack time 01 = 4 times attack time 10 = 8 times attack time 11 = 16 times attack time fig 25. stereo blend controlled by modulation modulation (%) 0 100 80 40 60 20 001aag151 3 4 5 6 7.5 9 12 14 18 25 stereo a cs (db) mono smod[1:0] 11 01 10 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 35 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.14 write mode: data byte stereo1 table 48. stereo blend attack time sat2 sat1 sat0 stereo blend attack time 00060ms 0 0 1 125 ms 0 1 0 250 ms 0 1 1 0.5 s 1001s 1012s 1104s 1118s table 49. stereo1 - data byte bh bit allocation with default setting 7 6 5 4 3 2 1 0 sfol ssol 0 sst2 sst1 sst0 ssl1 ssl0 00 00000 table 50. stereo1 - data byte bh bit description bit symbol description 7 sfol stereo blend fast on level 0 = no fast control on level 1 = fast control on level active 6 ssol stereo blend slow on level 0 = no slow control on level 1 = slow control on level active 5 - not used, must be set to logic 0 4 to 2 sst[2:0] stereo blend start on level 000 to 111 = high threshold to low threshold of weak signal stereo blend control; see figure 26 1 and 0 ssl[1:0] stereo blend slope on level 00 to 11 = low steepness to high steepness of slope of weak signal stereo blend control; see figure 26 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 36 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.15 write mode: data byte stereo2 (0) sst[2:0] = 000 (1) sst[2:0] = 001 (2) sst[2:0] = 010 (3) sst[2:0] = 011 (4) sst[2:0] = 100 (5) sst[2:0] = 101 (6) sst[2:0] = 110 (7) sst[2:0] = 111 fig 26. stereo blend controlled by level information lev 40 240 200 120 160 80 001aag148 (0) (1) (2) (3) (4) (5) (6) (7) 3 9 7.5 6 5 4 25 18 14 12 stereo mono a cs (db) sst[2:0] 00 01 10 11 ssl[1:0] table 51. stereo2 - data byte ch bit allocation with default setting 7 6 5 4 3 2 1 0 sfon sson sns1 sns0 sfom ssom sms1 sms0 00000000 table 52. stereo2 - data byte ch bit description bit symbol description 7 sfon stereo blend fast on noise (usn) 0 = no fast control on noise (usn) 1 = fast control on noise (usn) active 6 sson stereo blend slow on noise (usn) 0 = no slow control on noise (usn) 1 = slow control on noise (usn) active 5 and 4 sns[1:0] sensitivity of stereo blend on noise (usn) 00 to 11 = weak to strong stereo blend control by fm noise (usn); see figure 27 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 37 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 3 sfom stereo blend fast on multipath (wam) 0 = no fast control on multipath (wam) 1 = fast control on multipath (wam) active 2 ssom stereo blend slow on multipath (wam) 0 = no slow control on multipath (wam) 1 = slow control on multipath (wam) active 1 and 0 sms[1:0] sensitivity of stereo blend on multipath (wam) 00 to 11 = weak to strong stereo blend control by fm multipath (wam); see figure 28 fig 27. stereo blend controlled by usn information fig 28. stereo blend controlled by wam information table 52. stereo2 - data byte ch bit description continued bit symbol description usn 015 12 6 39 001aag149 3 4 5 6 7.5 9 12 14 18 25 stereo a cs (db) mono 00 01 10 11 sns[1:0] wam 015 12 6 39 001aag150 3 4 5 6 7.5 9 12 14 18 25 stereo a cs (db) mono 00 01 10 11 sms[1:0] www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 38 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.16 write mode: data byte control 8.2.17 write mode: data byte level_offset [1] the level offset can be used to correct for active antenna gain and noise level. the level correction in?uences the weak signal processing and the level read data via i 2 c-bus. the level correction does not in?uence the analog voltage at pin rssi. table 53. control - data byte dh bit allocation with default setting 7 6 5 4 3 2 1 0 port nblim 0 1 0 1 bwlev bwmod 00 00 table 54. control - data byte dh bit description bit symbol description 7 port switch output port 0 = pin test open-circuit 1 = pin test pull-down to ground 6 nblim fm noise blanker pulse rate limiter 0 = pulse rate not limited 1 = pulse rate limited to 400 hz 5 - not used, must be set to logic 0 4 - not used, must be set to logic 1 3 - not used, must be set to logic 0 2 - not used, must be set to logic 1 1 bwlev dynamic fm bandwidth control as a function of low level 0 = narrow bandwidth (reduced noise) 1 = wide bandwidth (modulation handling) 0 bwmod dynamic fm bandwidth control as a function of modulation 0 = adjacent channel suppression 1 = modulation handling table 55. level_offset - data byte eh bit allocation with default setting 7 6 5 4 3 2 1 0 0 levo6 levo5 levo4 levo3 levo2 levo1 levo0 1000000 table 56. level_offset - data byte eh bit description bit symbol description 7 - not used, must be set to logic 0 6 to 0 levo[6:0] level offset control [1] 0 to 127 = correction of the digital level information equivalent to a level voltage shift of - 1 v to +1 v www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 39 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 8.2.18 write mode: data byte am_lna 9. limiting values table 57. am_lna - data byte fh bit allocation with default setting 7 6 5 4 3 2 1 0 0 0 aaitt alamt 0 chsep2 chsep1 chsep0 01 100 table 58. am_lna - data byte fh bit description bit symbol description 7 and 6 - not used, must be set to logic 0 5 aaitt am auto-injection test time 0 = 4 ms am mirror measurement time at auto-injection tuning 1 = 8 ms am mirror measurement time at auto-injection tuning 4 alamt am lna agc mute time; audio mute and fast agc settling at am lna agc step 0 = 4 ms 1 = 7 ms 3 - not used, must be set to logic 0 2 to 0 chsep[2:0] stereo channel separation alignment 100 = default setting (no alignment) 000 to 111 = optional channel separation table 59. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage on pins v cc1 and v cc2 - 0.3 +10 v d v ccn voltage difference between any supply pins between pins v cc1 and v cc2 - 0.3 +0.3 v v scl voltage on pin scl - 0.3 +6 v v sda voltage on pin sda - 0.3 +6 v v amrfdec voltage on pin amrfdec - 0.3 +6 v v amrfin voltage on pin amrfin - 0.3 +6 v v amrfagc voltage on pin amrfagc - 0.3 +6 v v amifagc2 voltage on pin amifagc2 - 0.3 +6 v v rssi rssi voltage - 0.3 +6 v v vcodec voltage on pin vcodec - 0.3 +6 v v pll voltage on pin pll - 0.3 +6 v v pllref voltage on pin pllref - 0.3 +6 v v test voltage on pin test - 0.3 +6 v v amifagc1 voltage on pin amifagc1 - 0.3 +6 v v vref voltage on pin vref - 0.3 +6 v v n voltage on any other pin - 0.3 +v cc v t stg storage temperature - 40 +150 c www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 40 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic [1] for use of full operating supply voltage range and operating temperature range, the thermal resistance r th(j-a) should be less than 54 k/w. [2] class 2 according to jesd22-a114d. [3] class b according to eia/jesd22-a115-a. 10. thermal characteristics [1] single layer board 70 mm by 100 mm with a copper thickness of 35 m m and a copper area coverage of 20 %. 11. static characteristics [1] sda and scl high and low internal thresholds are specited according to an i 2 c-bus voltage of 2.5 v 10 % or 3.3 v 5 %. the i 2 c-bus interface tolerates also sda and scl signals from a 5 v i 2 c-bus, but does not fultll the 5 v i 2 c-bus specitcation completely. the TEF6606 complies with the fast-mode i 2 c-bus protocol. the maximum i 2 c-bus communication speed is 400 kbit/s. t amb ambient temperature [1] - 40 +85 c t j(max) maximum junction temperature - 150 c v esd electrostatic discharge voltage human body model [2] - 2000 +2000 v machine model [3] - 200 +200 v table 59. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit table 60. thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient in free air [1] 45 k/w table 61. static characteristics v cc = 8.5 v; t amb =25 c; unless otherwise specited. symbol parameter conditions min typ max unit v cc supply voltage on pins v cc1 and v cc2 8 8.5 9 v i cc supply current into pins v cc1 , v cc2 and vregsup fm 90 120 140 ma am 100 134 150 ma v vregsup voltage on pin vregsup t amb = - 40 cto+85 c 6.35 - - v power-on reset v p(por) power-on reset supply voltage reset at power-on 6.5 6.75 7.0 v v hys(por) power-on reset hysteresis voltage - 0.2 - v t start start time series resistance of crystal r s = 150 w - 10 100 ms logic pins sda and scl (voltage referenced to pin gndd) v ih high-level input voltage [1] 1.58 - 5.5 v v il low-level input voltage [1] - 0.5 - +1.04 v www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 41 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 12. dynamic characteristics table 62. dynamic characteristics v cc = 8.5 v; t amb =25 c; unless otherwise specited. fm condition: all rf voltages refer to an unterminated rms voltage with a source impedance 75 w ; f mod = 1 khz, d f = 22.5 khz, de-emphasis = 50 m s, f rf = 97.1 mhz; unless otherwise specited. am condition: all rf voltages are rms values measured at the input of a 15 pf / 60 pf dummy aerial; f mod = 400 hz, m=30%, f rf = 990 khz; unless otherwise specited. all values measured in a test circuit according to figure 30 ; default settings; audio signals measured at lout and rout with iec tuner tlter (200 hz to 15 khz; iec 60315-4); unless otherwise specited. symbol parameter conditions min typ max unit crystal oscillator; pins xtal1 and xtal2 f xtal crystal frequency fundamental frequency - 4 - mhz d f xtal inaccuracy caused by device -45 -0 45 ppm c i input capacitance input capacitance from xtal1 and xtal2 to ground 134 pf r i input resistance - - - 750 w tuning system c/n lo carrier-to-noise ratio f lo = 100 mhz; d f = 10 khz - 98 - dbc/ ? hz t tune tuning time fm (europe/usa/japan) f rf = 87.5 mhz to 108 mhz - 1.8 2 ms fm (oirt) f rf = 65 mhz to 74 mhz - 6.8 7 ms am (mw) f rf = 0.53 mhz to 1.7 mhz - 9 9.2 ms am (lw) f rf = 0.144 mhz to 0.288 mhz - 3.5 3.7 ms am (sw) f rf = 2.94 mhz to 18.135 mhz - 3.5 3.7 ms f rf rf frequency fm tuning range 65 - 108 mhz am (lw) tuning range 144 - 288 khz am (mw) tuning range 522 - 1710 khz am (sw) tuning range 2.94 - 18.135 mhz f tune(step) step of tuning frequency fm (europe/usa/japan) - 50 - khz fm (oirt) - 10 - khz am (lw and mw) - 1 - khz am (sw) - 5 - khz fm path v i(sens) input sensitivity voltage (s+n)/n = 26 db; without weak signal handling - 5.5 - db m v (s+n)/n = 26 db; including weak signal handling -5- db m v (s+n)/n = 46 db; including weak signal handling -16- db m v nf noise tgure - 6 9 db v l(lo) lo leakage voltage lo residue at antenna input; r source(ant) =75 w [1] - - 6- db m v www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 42 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic v sp(vco) vco spurious voltage vco residue at antenna input; r source(ant) =75 w -4660db m v (s+n)/n signal plus noise-to-noise ratio v i(rf) = 1 mv; d f = 22.5 khz 55 60 - db a ripple ripple rejection v ripple /v audio ; v ripple = 100 mv; f ripple = 100 hz 34 44 - db f if if frequency - 150 - khz a image image rejection f rf(image) = f rf(wanted) 2 f if 50 60 - db ip3 third-order intercept point f rf(unw)1 = 97.5 mhz; f rf(unw)2 = 97.9 mhz; v i(rf) =80db m v 106 113 - db m v s dyn dynamic selectivity v i(rf) =10 m v; d f rf(unw) = 22.5 khz; (s+n)/n = 26 db; mono; f af = 1 khz d f rf = 100 khz; pacs disabled - 3 - db d f rf = 200 khz; pacs disabled - 55 - db d f rf = 100 khz; pacs enabled - 24 - db d f rf = 200 khz; pacs enabled - 64 - db s stat static selectivity maximum if bandwidth; f i(rf) 100 khz 10 14 25 db maximum if bandwidth; f i(rf) 200 khz 54 64 74 db maximum if bandwidth; f i(rf) 300 khz (excluding image) 65 75 90 db minimum if bandwidth; f i(rf) 100 khz 30 38 - db minimum if bandwidth; f i(rf) 200 khz 63 73 - db a sup(am) am suppression am: f af = 1 khz; m = 30 % v i(rf) = 0.05 mv to 20 mv 45 55 - db v i(rf) = 20 mv to 500 mv 40 50 - db v start(desens) desensitization start voltage unwanted signal voltage for 6 db desensitization; | f rf(unw) - f rf(wanted) | > 400 khz; v i(rf)wanted =30db m v; data byte 2h bits rfagc[1:0] = 00 -90- db m v v sp spurious voltage at antenna input; r source(ant) =75 w 30mhz draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 44 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic audio part; pin mpxin r i input resistance data byte 3h bit locut = 0 (fm or am) - 220 - k w data byte 3h bit locut = 1 (am) - 16 - k w a bal(ch) channel balance balance between r and l channel - 1 - +1 db a sup(pilot) pilot suppression 9 % pilot; f pilot = 19 khz; referenced to 91 % fm modulation 30 40 - db m pilot modulation degree of pilot tone threshold for pilot detection stereo on 2 3.9 5.8 % stereo off 1.2 3.1 5 % a hys(pilot) pilot hysteresis 0.7 0.8 1.6 % t det(pilot) pilot detection time - 30 100 ms audio output; pins lout and rout v o output voltage d f = 22.5 khz; f af = 1 khz data byte 3h bit outa = 1 200 290 410 mv data byte 3h bit outa = 0 80 120 175 mv a af af attenuation mono; pre-emphasis = 50 m s; referenced to f af = 1 khz f af =50hz - 0.6 - 0.1 +0.4 db f af =15khz - 1.5 0 +1.5 db a cs channel separation v i(rf) = 1 mv; data byte fh bits chsep[2:0] = 100 26 40 - db thd total harmonic distortion mono; d f = 75 khz; v i(rf) = 1 mv - 0.4 0.8 % stereo; d f = 67.5 khz; l or r - - 1 % r l load resistance 10 - - k w c l load capacitance - - 20 pf fm noise blanker (s+n)/n signal plus noise-to-noise ratio noise pulses at rf input signal t p = 5 ns; t r < 1 ns; t f < 1 ns; f p = 100 hz; v p = 500 mv; v i(rf) =40db m v; quasi peak; audio tlter according itu-r bs.468-4 -30- db am path v i(sens) input sensitivity voltage s/n = 26 db; data byte 3h bits demp[1:0] = 10; mw -34- db m v v n(i)(eq) equivalent input noise voltage c source = 100 pf - 1 - nv/ ? hz (s+n)/n signal plus noise-to-noise ratio v i(rf) =10mv 50 56 - db table 62. dynamic characteristics continued v cc = 8.5 v; t amb =25 c; unless otherwise specited. fm condition: all rf voltages refer to an unterminated rms voltage with a source impedance 75 w ; f mod = 1 khz, d f = 22.5 khz, de-emphasis = 50 m s, f rf = 97.1 mhz; unless otherwise specited. am condition: all rf voltages are rms values measured at the input of a 15 pf / 60 pf dummy aerial; f mod = 400 hz, m=30%, f rf = 990 khz; unless otherwise specited. all values measured in a test circuit according to figure 30 ; default settings; audio signals measured at lout and rout with iec tuner tlter (200 hz to 15 khz; iec 60315-4); unless otherwise specited. symbol parameter conditions min typ max unit www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 45 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic f if if frequency - 25 - khz a image image rejection f rf(image) = f rf(wanted) 2 f if 45 55 - db a sup(h)lo lo harmonics suppression f rf(unw) =n (f rf(wanted) f if ) f if ; mw n = 2, 3, 4, 5, 6 - 90 - db n 3 7 - 50 - db v l(lo) lo leakage voltage lo residue at antenna input; load capacitance at antenna input: c ant =60pf - - 6- db m v b ?tr(if) if tlter bandwidth - 3 db bandwidth 5 6.5 8 khz s stat static selectivity f tune 10 khz 40 48 - db f tune 20 khz 65 78 - db v i(rf)(max) maximum rf input voltage thd = 10 %; m = 80 %; active antenna 50 w 120 135 - db m v ip2 second-order intercept point 150 170 - db m v ip3 third-order intercept point d f = 40 khz 116 127 - db m v am lna and am rf agc; input pins amrfin and amrfdec r i input resistance f rf = 990 khz - 20 - w c i input capacitance agc maximum gain [2] [3] - 530 - pf mw band with passive antenna (measured with dummy aerial 15 pf / 60 pf) v i(rf)agc agc rf input voltage switched lna agc: v i(rf) value, at which the lna gain decreases with increasing v i(rf) ; m = 0 %; start of agc; trst step 110 113 116 db m v v i(rf)agc(hys) hysteresis of agc rf input voltage hysteresis of agc start 1 3 6 db mw band with active antenna (measured with dummy aerial 50 w ) v i(rf)agc agc rf input voltage switched lna agc: v i(rf) value, at which the lna gain decreases with increasing v i(rf) ; m = 0 %; start of agc; trst step 78 81 84 db m v v i(rf)agc(hys) hysteresis of agc rf input voltage hysteresis of agc start 1 3 6 db lw band with passive antenna (measured with dummy aerial 15 pf / 60 pf) v i(rf)agc agc rf input voltage switched lna agc: v i(rf) value, at which the lna gain decreases with increasing v i(rf) ; f rf = 207 khz; m = 0 %; start of agc; trst step - 104 - db m v table 62. dynamic characteristics continued v cc = 8.5 v; t amb =25 c; unless otherwise specited. fm condition: all rf voltages refer to an unterminated rms voltage with a source impedance 75 w ; f mod = 1 khz, d f = 22.5 khz, de-emphasis = 50 m s, f rf = 97.1 mhz; unless otherwise specited. am condition: all rf voltages are rms values measured at the input of a 15 pf / 60 pf dummy aerial; f mod = 400 hz, m=30%, f rf = 990 khz; unless otherwise specited. all values measured in a test circuit according to figure 30 ; default settings; audio signals measured at lout and rout with iec tuner tlter (200 hz to 15 khz; iec 60315-4); unless otherwise specited. symbol parameter conditions min typ max unit www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 46 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic v i(rf)agc(hys) hysteresis of agc rf input voltage hysteresis of agc start 1 3 6 db lw band with active antenna (measured with dummy aerial 50 w ) v i(rf)agc agc rf input voltage switched lna agc: v i(rf) value, at which the lna gain decreases with increasing v i(rf) ; f rf = 207 khz; m = 0 %; start of agc; trst step -72- db m v v i(rf)agc(hys) hysteresis of agc rf input voltage hysteresis of agc start 1 3 6 db sw bands with passive antenna (measured with dummy aerial 15 pf / 60 pf) v i(rf)agc agc rf input voltage switched lna agc: v i(rf) value, at which the lna gain decreases with increasing v i(rf) ; f rf = 6.1 mhz; m = 0 %; start of agc; trst step - 101 - db m v v i(rf)agc(hys) hysteresis of agc rf input voltage hysteresis of agc start 1 3 6 db sw bands with active antenna (measured with dummy aerial 50 w ) v i(rf)agc agc rf input voltage switched lna agc: v i(rf) value, at which the lna gain decreases with increasing v i(rf) ; f rf = 6.1 mhz; m = 0 %; start of agc; trst step -80- db m v v i(rf)agc(hys) hysteresis of agc rf input voltage hysteresis of agc start 1 3 6 db continuous am rf agc v i(rf)agc agc rf input voltage linear rf agc: v i(rf) at which agc starts; m=0% data byte 2h bits rfagc[1:0] = 00 87 90 93 db m v data byte 2h bits rfagc[1:0] = 01 85 88 91 db m v data byte 2h bits rfagc[1:0] = 10 83 86 89 db m v data byte 2h bits rfagc[1:0] = 11 81 84 87 db m v t s settling time v i(rf) = 10 mv to 600 mv - 64 - ms v i(rf) = 600 mv to 10 mv - 3.2 - s table 62. dynamic characteristics continued v cc = 8.5 v; t amb =25 c; unless otherwise specited. fm condition: all rf voltages refer to an unterminated rms voltage with a source impedance 75 w ; f mod = 1 khz, d f = 22.5 khz, de-emphasis = 50 m s, f rf = 97.1 mhz; unless otherwise specited. am condition: all rf voltages are rms values measured at the input of a 15 pf / 60 pf dummy aerial; f mod = 400 hz, m=30%, f rf = 990 khz; unless otherwise specited. all values measured in a test circuit according to figure 30 ; default settings; audio signals measured at lout and rout with iec tuner tlter (200 hz to 15 khz; iec 60315-4); unless otherwise specited. symbol parameter conditions min typ max unit www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 47 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic i source(agc) agc source current agc attack; v i(rf)m = 105 db m v (peak); normal mode 25 35 50 m a agc attack; fast mode after tuning and agc switching 0.7 1 1.4 ma i sink(agc) agc sink current agc release; normal mode 0.7 1 1.4 m a agc release; fast mode after tuning and agc switching 17.5 25 35 m a continuous if agc 1 v i(rf)agc agc rf input voltage linear if agc 1: v i(rf) at which agc starts; m=0% 59 62 65 db m v i source(agc) agc source current agc attack; v i(rf)m =80db m v (peak); normal mode 35 50 70 m a agc attack; fast mode after tuning and agc switching 0.875 1.25 1.75 ma i sink(agc) agc sink current agc release; normal mode 0.7 1 1.4 m a agc release; fast mode after tuning and agc switching 17.5 25 35 m a continuous if agc 2 v i(rf)agc agc rf input voltage linear if agc 2: v i(rf) at which agc starts; m=0% 19 22 25 db m v i source(agc) agc source current agc attack; v i(rf)m =50db m v (peak); normal mode 468 m a agc attack; fast mode after tuning and agc switching 100 150 200 m a i sink(agc) agc sink current agc release; normal mode 0.7 1 1.4 m a agc release; fast mode after tuning and agc switching 17.5 25 35 m a am demodulator; pin mpxout v o output voltage m = 30 % 175 210 250 mv audio output; pins lout and rout v o output voltage m = 30 %; f af = 400 hz; data byte 3h bits demp[1:0] = 10 data byte 3h bit outa = 1 200 270 355 mv data byte 3h bit outa = 0 85 115 150 mv table 62. dynamic characteristics continued v cc = 8.5 v; t amb =25 c; unless otherwise specited. fm condition: all rf voltages refer to an unterminated rms voltage with a source impedance 75 w ; f mod = 1 khz, d f = 22.5 khz, de-emphasis = 50 m s, f rf = 97.1 mhz; unless otherwise specited. am condition: all rf voltages are rms values measured at the input of a 15 pf / 60 pf dummy aerial; f mod = 400 hz, m=30%, f rf = 990 khz; unless otherwise specited. all values measured in a test circuit according to figure 30 ; default settings; audio signals measured at lout and rout with iec tuner tlter (200 hz to 15 khz; iec 60315-4); unless otherwise specited. symbol parameter conditions min typ max unit www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 48 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic [1] f lo =f rf +f if for high injection and f lo =f rf - f if for low injection. [2] the switched input capacitance is part of the switched rf agc function. [3] the input impedance of the am lna depends on the agc state. a af af attenuation referenced to f af = 400 hz f af = 100 hz; data byte 3h bit locut = 1 - 4.5 - 3 - 1.5 db f af = 1.5 khz; data byte 3h bits demp[1:0] = 10 - 4 - 3 - 2db thd total harmonic distortion v i(rf) =1mv; m=80% - 0.7 1 % a ripple ripple rejection v ripple /v audio ; v ripple = 100 mv; f ripple = 100 hz 24 31 - db am noise blanker sinad signal-to-noise-and-distortion ratio m=30%; f af = 1 khz; noise pulses at rf input signal t p = 100 ns; t r < 1 ns; t f < 1 ns; f p = 100 hz; v p = 500 mv; v i(rf) =40db m v -12- db am rssi; pin rssi v rssi rssi voltage v i(rf) = - 20 db m v at dummy aerial input 1.05 1.2 1.35 v v i(rf) =14db m v at dummy aerial input 1.7 1.9 2.1 v v i(rf) =34db m v at dummy aerial input 2.65 2.9 3.15 v v i(rf) =54db m v at dummy aerial input 3.5 3.8 4.1 v d v rssi / d l i(rf) rssi voltage difference to rf input level difference ratio 5 m v draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 50 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic table 63. 4mhz crystal specitcation for figure 29 and figure 30 parameter symbol value unit nominal frequency f n 4.000 mhz oscillation mode fundamental load capacitance c l 18 pf shunt capacitance c o 7 max. pf motional capacitance c 1 10 typ. ff series resistance r r 150 max. w accuracy at 25 c d f n +/-25 ppm ageing d f n +/-5 ppm temperature stability d f n +/-30 ppm operating temperature range t -40 /+85 c www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 51 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 14. test information for list of components see t ab le 64 . fig 30. test circuit of TEF6606t 001aag188 100 nf 1 m f 100 nf 10 nf 10 nf 10 nf 18 pf 1 nf 15 pf 1 nf 5.6 pf 220 nf 1 m f 1 m f 220 nf 1 m f 100 nf x1 4 mhz 22 w 82 w 4.7 k w 470 k w 10 k w 470 k w 47 m f 3.3 m h 1 nf rssi scl sda test v cc v p 17 am tuner fm tuner output TEF6606t 560 m h 1.8 m h 470 nh l2 215 nh l1 290 nh 560 m h pll tuning system power supply i 2 c-bus stereo decoder high cut soft mute noise blanker signal improvement control bandwidth control 18 19 20 21 22 23 29 28 27 30 31 32 1 2 5 6 7 11 12 13 14 15 16 24 25 26 10 9 8 r l 4 3 10 nf 100 nf 22 pf 20 pf 10 k w 20 pf 10 k w 20 pf 22 pf 1 nf www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 52 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic table 64. list of components for figure 29 and figure 30 symbol component type manufacturer l1 fm rf input 1 290 nh; lqh31hnr29k03l murata l2 fm rf input 2 215 nh; lqh31hnr21k01l murata x1 crystal 4 mhz ln-g102-1413 ndk table 65. dc operating points v i(rf) =0 m v; audio output gain low; unless otherwise specited. symbol pin unloaded dc voltage (v) am mode fm mode min typ max min typ max amrfdec 1 - 4.1 - ?oating amrfin 2 - 2.85 - - - - fmin2 3 - - - - 3.1 - fmin1 4 - - - - 3.1 - gndrf 5 external gnd external gnd v cc2 6 external 8.5 external 8.5 amrfagc 7 ?oating - - - lout 8 - 3.8 - - 3.8 - rout 9 - 3.8 - - 3.8 - gndaud 10 external gnd external gnd amifagc2 11 - - - - - - mpxin 12 - 3.7 - - 3.7 - mpxout 13 - 4 - - 4 - rssi 14 - 1.3 - - 1.3 - xtal2 15 - 6.5 - - 6.5 - xtal1 16 - 6.5 - - 6.5 - gndd 17 external gnd external gnd scl 18 external i 2 c-bus voltage external i 2 c-bus voltage sda 19 external i 2 c-bus voltage external i 2 c-bus voltage vref 20 3.9 4.0 4.1 3.9 4.0 4.1 vregsup 21 5.6 6.5 7 5.6 6.5 7 v cc1 22 external 8.5 external 8.5 gnd 23 external gnd external gnd vcodec 24 - 5.7 - - 5.7 - pll 25 1.2 - 5.5 1.2 - 5.5 pllref 26 - 2.25 - - 2.25 - test 27 - - - - - - amselin1 28 7 - v cc 7- v cc amselin2 29 7 - v cc 7- v cc amifagc1 30 - 5.5 - - - - amselout1 31 7 - v cc 7- v cc amselout2 32 7 - v cc 7- v cc www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 53 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 14.1 quality information this product has been qualited in accordance with the automotive electronics council (aec) standard q100 (stress qualitcation for integrated circuits) and is suitable for use in automotive critical applications. www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 54 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 15. package outline fig 31. package outline sot287-1 (so32) unit a max. a 1 a 2 a 3 b p cd (1) e (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec jeita mm inches 2.65 0.1 0.25 0.01 1.4 0.055 0.3 0.1 2.45 2.25 0.49 0.36 0.27 0.18 20.7 20.3 7.6 7.4 1.27 10.65 10.00 1.2 1.0 0.95 0.55 8 0 o o 0.25 0.1 0.004 0.25 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 1.1 0.4 sot287-1 mo-119 (1) 0.012 0.004 0.096 0.089 0.02 0.01 0.05 0.047 0.039 0.419 0.394 0.30 0.29 0.81 0.80 0.011 0.007 0.037 0.022 0.01 0.01 0.043 0.016 w m b p d h e z e c v m a x a y 32 17 16 1 q a a 1 a 2 l p q detail x l (a ) 3 e pin 1 index 0 5 10 mm scale so32: plastic small outline package; 32 leads; body width 7.5 mm sot287-1 00-08-17 03-02-19 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 55 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 16. soldering this text provides a very brief insight into a complex technology. a more in-depth account of soldering ics can be found in application note an10365 surface mount re?ow soldering description . 16.1 introduction to soldering soldering is one of the most common methods through which packages are attached to printed circuit boards (pcbs), to form electrical circuits. the soldered joint provides both the mechanical and the electrical connection. there is no single soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount devices (smds) are mixed on one printed wiring board; however, it is not suitable for tne pitch smds. re?ow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 16.2 wave and re?ow soldering wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. the wave soldering process is suitable for the following: through-hole components leaded or leadless smds, which are glued to the surface of the printed circuit board not all smds can be wave soldered. packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. also, leaded smds with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. the re?ow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature protle. leaded packages, packages with solder balls, and leadless packages are all re?ow solderable. key characteristics in both wave and re?ow soldering are: board specitcations, including the board tnish, solder masks and vias package footprints, including solder thieves and orientation the moisture sensitivity level of the packages package placement inspection and repair lead-free soldering versus pbsn soldering 16.3 wave soldering key characteristics in wave soldering are: process issues, such as application of adhesive and ?ux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave solder bath specitcations, including temperature and impurities www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 56 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 16.4 re?ow soldering key characteristics in re?ow soldering are: lead-free versus snpb soldering; note that a lead-free re?ow process usually leads to higher minimum peak temperatures (see figure 32 ) than a pbsn process, thus reducing the process window solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board re?ow temperature protle; this protle includes preheat, re?ow (in which the board is heated to the peak temperature) and cooling down. it is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). in addition, the peak temperature must be low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classited in accordance with t ab le 66 and 67 moisture sensitivity precautions, as indicated on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during re?ow soldering, see figure 32 . table 66. snpb eutectic process (from j-std-020c) package thickness (mm) package re?ow temperature ( c) volume (mm 3 ) < 350 3 350 < 2.5 235 220 3 2.5 220 220 table 67. lead-free process (from j-std-020c) package thickness (mm) package re?ow temperature ( c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 57 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic for further information on temperature protles, refer to application note an10365 surface mount re?ow soldering description . 17. abbreviations msl: moisture sensitivity level fig 32. temperature protles for large and small components 001aac844 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature table 68. abbreviations acronym description agc automatic gain control hcc high-cut control if intermediate frequency lo local oscillator lw long wave mpx multiplex mw medium wave pacs precision adjacent channel suppression pll phase-locked loop rf radio frequency rssi received signal strength indication sw short wave usn ultrasonic noise vco voltage-controlled oscillator wam wideband am www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 58 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 18. revision history table 69. revision history document id release date data sheet status change notice supersedes TEF6606_1 yyyymmdd objective data sheet - - moditcations: updated figure 5 to figure 15 , figure 29 and figure 30 changed device type identitcation in section 8.1.5 changed text inset in section 14.1 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 12 june 2007 document identifier: TEF6606_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 19. legal information 19.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section detnitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 19.2 detnitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in moditcations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales oftce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 19.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specitcations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specited use without further testing or moditcation. limiting values ? stress above one or more limiting values (as detned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/prot le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 19.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. i 2 c-bus ? logo is a trademark of nxp b.v. 20. contact information for additional information, please visit: http://www .nxp.com for sales oftce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] detnition objective [short] data sheet development this document contains data from the objective specitcation for product development. preliminary [short] data sheet qualitcation this document contains data from the preliminary specitcation. product [short] data sheet production this document contains the product specitcation. www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 60 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 21. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 functional description . . . . . . . . . . . . . . . . . . . 5 7.1 fm tuner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.2 am tuner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.3 pll tuning system . . . . . . . . . . . . . . . . . . . . . . 5 7.4 signal dependent fm if bandwidth control . . . 5 7.5 fm stereo decoder . . . . . . . . . . . . . . . . . . . . . . 5 7.6 weak signal processing and noise blanker. . . . 5 7.7 i 2 c-bus transceiver . . . . . . . . . . . . . . . . . . . . . . 6 8i 2 c-bus protocol . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1 read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1.1 read mode: data byte status . . . . . . . . . . . . 7 8.1.2 read mode: data byte level . . . . . . . . . . . . . 7 8.1.3 read mode: data byte usn_wam . . . . . . . . . . 8 8.1.4 read mode: data byte ifcounter . . . . . . . . 8 8.1.5 read mode: data byte id . . . . . . . . . . . . . . . . . 9 8.2 write mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8.2.1 mode and subaddress byte for write. . . . . . . . 10 8.2.2 write mode: data byte tuner0 . . . . . . . . . . . 22 8.2.3 write mode: data byte tuner1 . . . . . . . . . . . 22 8.2.4 write mode: data byte tuner2 . . . . . . . . . . . 23 8.2.5 write mode: data byte radio . . . . . . . . . . . . 24 8.2.6 write mode: data byte softmute0 . . . . . . . 24 8.2.7 write mode: data byte softmute1 . . . . . . . 25 8.2.8 write mode: data byte softmute2_fm. . . . 27 8.2.9 write mode: data byte softmute2_am . . . 29 8.2.10 write mode: data byte highcut0 . . . . . . . . . 29 8.2.11 write mode: data byte highcut1 . . . . . . . . . 30 8.2.12 write mode: data byte highcut2 . . . . . . . . . 32 8.2.13 write mode: data byte stereo0. . . . . . . . . . 34 8.2.14 write mode: data byte stereo1. . . . . . . . . . 35 8.2.15 write mode: data byte stereo2. . . . . . . . . . 36 8.2.16 write mode: data byte control . . . . . . . . . 38 8.2.17 write mode: data byte level_offset . . . . 38 8.2.18 write mode: data byte am_lna . . . . . . . . . . . 39 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 39 10 thermal characteristics. . . . . . . . . . . . . . . . . . 40 11 static characteristics. . . . . . . . . . . . . . . . . . . . 40 12 dynamic characteristics . . . . . . . . . . . . . . . . . 41 13 application information. . . . . . . . . . . . . . . . . . 49 14 test information . . . . . . . . . . . . . . . . . . . . . . . . 50 14.1 quality information . . . . . . . . . . . . . . . . . . . . . 52 15 package outline . . . . . . . . . . . . . . . . . . . . . . . . 53 16 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 16.1 introduction to soldering . . . . . . . . . . . . . . . . . 54 16.2 wave and re?ow soldering . . . . . . . . . . . . . . . 54 www.datasheet.co.kr datasheet pdf - http://www..net/ draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6606_1 ? nxp b.v. 2007. all rights reserved. objective data sheet rev. 01.03 ? 12 june 2007 61 of 61 unclassified nxp semiconductors TEF6606 advanced tuner on main-board ic 16.3 wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 54 16.4 re?ow soldering . . . . . . . . . . . . . . . . . . . . . . . 55 17 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 56 18 revision history . . . . . . . . . . . . . . . . . . . . . . . . 57 19 legal information. . . . . . . . . . . . . . . . . . . . . . . 58 19.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 58 19.2 detnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 19.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 19.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 20 contact information. . . . . . . . . . . . . . . . . . . . . 58 21 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 www.datasheet.co.kr datasheet pdf - http://www..net/ |
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